Protecting Against ESD in Die-to-Die Interfaces

By Bart Keppens, Chief Business Development, Sofics

Designers sometimes drop electrostatic discharge (ESD) protection clamps completely for die-to-die interfaces. Once sealed in the package, nothing can touch the pads so danger is unlikely. However, experts recommend some ESD protection to ensure the chiplet assembly process has enough yield. How much is enough? Industry experts recently settled on standards and robustness levels for chiplets. However, some designers still prefer to reduce robustness levels to allow smaller ESD diodes. This approach could cause problems as the interfaces use sensitive thin oxide transistors. Recent discussions focus on ESD events relevant to chiplets, industry proposals for ESD protection, and example solutions used in several applications. Special die-to-die ESD solutions have been used on a wide range of TSMC technologies.

Introduction
ESD for die-2-die interfaces
ESD requirements for die-2-die interfaces / chiplets
ESD protection for I/Os
Local ESD clamp in I/O area
Examples
Local ESD protection in 7nm FinFET
Local ESD protection in 7nm FinFET
Local ESD protection in 6nm FinFET
Local ESD protection in 5nm FinFET
Select the right ESD robustness level
CDM peak current depends on package size
Industry discussion to reduce CDM for SerDes
Further reduced CDM level for die-2-die interfaces
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Sofics’ IP is proven on 50+ processes
Sofics IP is used in many applications
Sofics IP is used in many applications
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