Interconnect Essential To Heterogenous Integration
By Karen Heyman, SemiEngineering
Chiplet communication will be impossible without interconnect protocols.
Designing and manufacturing interconnects is becoming more complex, and more critical to device reliability, as the chip industry shifts from monolithic planar dies to collections of chips and chiplets in a package.
What was once as simple as laying down a copper trace has evolved into tens of thousands of microbumps, hybrid bonds, through-silicon vias (TSVs), and even junctions for optical fiber. The main goal is still to get signals from point A to point B as quickly as possible with the least RC delay, using the lowest amount of power possible — all while ensuring those signals are intact and that they reach their destination. But making all of that work is a growing challenge.
To read the full article, click here
Related Chiplet
- 12nm EURYTION RFK1 - UCIe SP based Ka-Ku Band Chiplet Transceiver
- Interconnect Chiplet
- Bridglets
- Automotive AI Accelerator
- Direct Chiplet Interface
Related News
- Signal Integrity Designs at Organic Interposer CoWoS-R for HBM3-9.2Gbps High Speed Interconnection of 2.5D-IC Chiplets Integration
- Eliyan Supports Latest Version of UCIe Chiplet Interconnect Standard, Continues to Drive Performance and Bandwidth Capabilities to 40Gbps and Beyond to Help Meet the Needs of the Multi-die Era
- UCIe™ (Universal Chiplet Interconnect Express™) Consortium Releases its 1.1 Specification
- Chiplet Pioneer Eliyan Achieves First Silicon in Record Time with Implementation in TSMC 5nm Process, Confirms Most Efficient Chiplet Interconnect Solution in the Multi-Die Era
Latest News
- Untether AI Enters Into a Strategic Agreement with AMD
- Alphawave Semi Tapes Out Breakthrough 36G UCIe™ IP on TSMC 2nm, Unlocking Foundational AI Platform IP on Nanosheet Processes
- How Secure Are Analog Circuits?
- Sarcina Technology advances photonic package design to address key data center challenges
- Imec demonstrates 16nm pitch Ru lines with record-low resistance obtained using a semi-damascene integration approach